Research of Si and GaAs diode structures by Ion Beam Induced Charge (IBIC) collection

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 130, Issue 1-4, 1997, Pages 557-563

  Nishijima, T ^a   Sekiguchi, H ^a   Matsuda, S ^b   Shiono, N ^c  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^c Reliability Ctr Electron C   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRIC CHARGE; ELECTRODES; ION BEAMS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; SILICA; SUBSTRATES;

ION BEAM INDUCED CHARGE (IBIC) COLLECTION; ION MICROBEAMS; OHMIC ELECTRODES;

SEMICONDUCTOR DIODES;

EID: 0031548936     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00249-8     Document Type: Article

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