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Applied Physics A: Materials Science and Processing

Volumn 77, Issue 5, 2003, Pages 669-671

Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors

(9) Chu, R M a Zheng, Y D a Zhou, Y G a Gu, S L a Shen, B a Zhang, R a Jiang, R L a Han, P a Shi, Y a

a NANJING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; GALLIUM NITRIDE; HETEROJUNCTIONS; INTERFACES (MATERIALS); POISSON EQUATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

QUANTUM CONFINEMENT;

FIELD EFFECT TRANSISTORS;

EID: 0042470300 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-002-1760-6 Document Type: Article

Times cited : (15)

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