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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 6 A, 1997, Pages 3669-3674

Fabrication of SiO2/Si/SiO2 double barrier diodes using two-dimensional Si structures

(5) Namatsu, Hideo a Horiguchi, Seiji a Takahashi, Yasuo a Nagase, Masao a Kurihara, Kenji a

a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

Author keywords

(110)Si; Orientation dependent etching; Resonant characteristics; SiO2 Si SiO2 double barrier diode; SOI

Indexed keywords

AQUEOUS ALKALINE SOLUTION; DOUBLE BARRIER RESONANCE; LITHOGRAPHIC ALIGNMENTS; ORIENTATION DEPENDENT ETCHING;

CURRENT VOLTAGE CHARACTERISTICS; ELECTROCHEMICAL ELECTRODES; ELECTRON RESONANCE; ETCHING; FILM PREPARATION; LITHOGRAPHY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; SOLUTIONS;

SEMICONDUCTOR DIODES;

EID: 0031170529 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.3669 Document Type: Article

Times cited : (16)

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