Importance of gate charge formulation in large-signal PHEMT modeling

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1998, Pages 87-90

  Mallavarpu, Raghu ^a   Teeter, Douglas ^a   Snow, Marc ^a  

^a Advanced Device Center   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRIC DISTORTION; ELECTRIC POTENTIAL; GATES (TRANSISTOR); INTERMODULATION; SEMICONDUCTOR DEVICE MODELS;

THIRD ORDER INTERMODULATION DISTORTION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032317713     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)