Size fluctuation of 50 nm periodic GaInAsP/InP wire structure by electron beam lithography and wet chemical etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 11, 1998, Pages 5961-5962

  Kojima, Takashi ^a   Jia, Xue Ying ^a,b   Hayafune, Yoshinori ^a   Tamura, Shigeo ^a   Watanabe, Masahiro ^a   Arai, Shigehisa ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b Irie Koken Co Ltd   (Japan)

Author keywords

Electron beam lithography; Proximity effect; Quantum wire; Size fluctuation

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ETCHING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

PROXIMITY EFFECT; WET ETCHING;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0032204302     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.5961     Document Type: Article

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