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1
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0035545612
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Low temperature hydrogen detection at high concentrations: Comparison of platinum and iridium
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Scharnagl K., Karthigeyan A., Burgmair M., Zimmer M., Doll T., Eisele I. Low temperature hydrogen detection at high concentrations: comparison of platinum and iridium. Sens. Actuators B. 80:2001;163-168.
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Sens. Actuators B
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Scharnagl, K.1
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Eisele, I.6
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2
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0035975048
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Hydrogen detection at high concentrations with stabilised palladium
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Scharnagl K., Eriksson M., Karthigeyan A., Burgmair M., Zimmer M., Eisele I. Hydrogen detection at high concentrations with stabilised palladium. Sens. Actuators B. 78:2001;138-143.
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Scharnagl, K.1
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Eisele, I.6
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3
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0035545717
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Gold and platinum as ozone sensitive layer in work-function gas sensors
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Zimmer M., Burgmair M., Scharnagl K., Karthigeyan A., Doll T., Eisele I. Gold and platinum as ozone sensitive layer in work-function gas sensors. Sens. Actuators B. 80:2001;174-178.
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Sens. Actuators B
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Zimmer, M.1
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Eisele, I.6
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4
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0037141789
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A room temperature HSGFET ammonia sensor based on iridium oxide thin film
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Karthigeyan A., Gupta R.P., Scharnagl K., Burgmair M., Sharma S.K., Eisele I. A room temperature HSGFET ammonia sensor based on iridium oxide thin film. Sens. Actuators B. 85:2002;145-153.
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Sens. Actuators B
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Karthigeyan, A.1
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Eisele, I.6
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6
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0032092870
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Conductivity and work function ozone sensors based on indium oxide
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Doll T., Fuchs A., Eisele I., Faglia G., Gropelli S., Sberveglieri G. Conductivity and work function ozone sensors based on indium oxide. Sens. Actuators B. 49:1998;63.
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Doll, T.1
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7
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0032041203
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x, Al doped and Al coated NiO layers for gas detection with HSGFET
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x, Al doped and Al coated NiO layers for gas detection with HSGFET Sens. Actuators B. 47(1-3):1998;145-151.
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Sens. Actuators B
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Bögner, M.1
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8
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0034245653
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TiN in work function type sensors: A stable ammonia sensitive material for room temperature operation with low humidity cross sensitivity
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Ostrick B., Pohle R., Fleischer M., Meixner H. TiN in work function type sensors: a stable ammonia sensitive material for room temperature operation with low humidity cross sensitivity. Sens. Actuators B. 68(1-3):2000;234-239.
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11
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0001558024
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Room temperature ozone sensing with HSGFET gas sensors based on KI layers
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Fuchs A., Bögner M., Doll T., Eisele I. Room temperature ozone sensing with HSGFET gas sensors based on KI layers. Sens. Actuators B. 48:1998;297-300.
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Fuchs, A.1
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12
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0004156604
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Properties of insulated gate field effect transistors with polyaniline gate electrode
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Liess M., Chinn D., Petelenz D., Janata J. Properties of insulated gate field effect transistors with polyaniline gate electrode. Thin Solid Films. 132:1996;152-155.
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Liess, M.1
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13
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0004013761
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Polymer-oxide-silicon field effect transistor (POSFET) as sensor for gases and vapors
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V. Meister, K. Potje-Kamloth, H.D. Liess, Polymer-oxide-silicon field effect transistor (POSFET) as sensor for gases and vapors, in: Proceedings of the Sixth IMCS, 1996, p. 179.
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Meister, V.1
Potje-Kamloth, K.2
Liess, H.D.3
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14
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0028405665
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Fabrication of a hybrid field-effect structure for gas detection with diverse sensitive materials
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Flietner B., Doll T., Lechner J., Leu M., Eisele I. Fabrication of a hybrid field-effect structure for gas detection with diverse sensitive materials. Sens. Actuators B. 18-19:1994;632.
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16
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0035545688
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Low-power gas sensors based on work-function measurement in low-cost hybrid flip-chip technology
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Fleischer M., Ostrick B., Simon E., Meixner H., Bilger C., Daeche F. Low-power gas sensors based on work-function measurement in low-cost hybrid flip-chip technology. Sens. Actuators B. 80(3):2001;169-173.
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17
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0004002757
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Flip-chip mounting of hybrid FET gas sensors with air gap
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Potsdam, Germany
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A. Fuchs, T. Doll, I. Eisele, Flip-chip mounting of hybrid FET gas sensors with air gap, in: Proceedings of the Micro Systems Technology, Potsdam, Germany, 1998.
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Proceedings of the Micro Systems Technology
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Fuchs, A.1
Doll, T.2
Eisele, I.3
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18
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0002762234
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Work function gas sensors - Reference layers and signal analysis
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Southampton, UK, September
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T. Doll, K. Scharnagl, R. Winter, M. Bögner, I. Eisele, B. Ostrik, M. Schöning, Work function gas sensors - reference layers and signal analysis, in: Proceedings of the 12th European Conference on Solid-State Transducers, Southampton, UK, September, 1998.
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Proceedings of the 12th European Conference on Solid-state Transducers
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Doll, T.1
Scharnagl, K.2
Winter, R.3
Bögner, M.4
Eisele, I.5
Ostrik, B.6
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19
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0038110877
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Contribution of the gate insulator surface to work function measurements with a gas sensitive FET
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M. Burgmair, I. Eisele, Contribution of the gate insulator surface to work function measurements with a gas sensitive FET, Sens. Actuators B 93 (2003) 271-275.
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Humidity and temperature compensation in work function gas sensor FETs
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M. Burgmair, M. Zimmer, I. Eisele, Humidity and temperature compensation in work function gas sensor FETs, Sens. Actuators B 93 (2003) 271-275.
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Burgmair, M.1
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Eisele, I.3
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22
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0030104435
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Adsorption induced gas transport phenomena in narrow channels recorded with work function detectors
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Flietner B., Doll T., Lechner J., Eisele I. Adsorption induced gas transport phenomena in narrow channels recorded with work function detectors. J. Vac. Sci. Technol. A. 14(2):1996;278-285.
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0030257721
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The capacitively controlled field effect transistor (CC-FET) as a new low power gas sensor
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Gergintschew Z.d, Kornetzky P., Schipanski D. The capacitively controlled field effect transistor (CC-FET) as a new low power gas sensor. Sens. Actuators B. 35-36:1996;285-289.
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25
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0035341203
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Simultaneous measurement of cellular respiration and acidification with a single CMOS ISFET
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Lehmann M., Baumann W., Brischwein M., Gahle H.J., Freund I., Ehret R., Drechsler S., Palzer H., Kleintges M., Sieben U., Wolf B. Simultaneous measurement of cellular respiration and acidification with a single CMOS ISFET. Biosens. Bioelectr. 16:2001;195-203.
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Lehmann, M.1
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