Ultrashallow thermal donor formation in silicon by annealing in ambient oxygen

Journal of Applied Physics

Volumn 85, Issue 12, 1999, Pages 8054-8059

  Aberg D ^a   Linnarsson, M K ^a   Svensson, B G ^a   Hallberg, T ^b   Lindstrom J L ^c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b SWEDISH DEFENCE RESEARCH AGENCY   (Sweden)

^c LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041708273     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370642     Document Type: Article

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