A scalable model for the substrate resistance in multi-finger RF MOSFETs

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2003, Pages 2105-2108

  Han, Jeonghu ^a   Shin, Hyungcheol ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC RESISTANCE; SUBSTRATES;

Y-PARAMETERS;

MOSFET DEVICES;

EID: 0041589571     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. J-J. Ou, X. Jin, I. Ma, C. Hu, and P. R. Gray, "CMOS RF modeling for GHz communication IC's," 1998 VLSI Technology Symp. Tech. Dig., pp. 94-95, 1998.
2. S. H-M. Jen, C. C. Enz, D. R. Pehlke, M. Schröter, and B. J. Sheu, "Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz," IEEE Trans. Electron Devices, vol. 46, no. 11, pp. 2217-2227, Nov. 1999.
3. R. Sung, P. Bendix, and M. B. Das, "Extraction of high-frequency equivalent circuit parameters of submicron gate-length MOSFET's," IEEE Trans. Electron Devices, vol. 45, no. 8, pp. 1769-1775, Aug. 1998.
4. L. Tiemeijer and D. Klaassen, "Geometry scaling of the substrate loss of RF MOSFETs," 28th Eur. Solid-State Device Research Conf. (ESSDERC) Tech. Dig., pp. 480-483, 1998.
5. I. Kwon, M. Je, K. Lee, and H. Shin, "A simple and analytical parameter extraction method of MOSFET for microwave modeling," IEEE Trans. Microwave Theory and Tech., vol. 50, no. 6, pp. 1503-1509, June 2002.
6. S. F. Tin, A. A. Osman, K. Mayaram, and C. Hu, "A simple subcircuit extension of the BSIM3v3 model for CMOS RF design," IEEE Jour. Solid-State Circ., vol. 35, no. 4, pp. 612-624, Apr. 2000.
7. J. Han, M. Je, and H. Shin, "A simple and accurate method for extracting substrate resistance of RF MOSFETs," IEEE Electron Device Lett., vol. 23, no. 7, pp. 434-436, July 2002.
8. Y. Cheng and M. Matloubian, "Parameter extraction of accurate and scaleable substrate resistance components in RF MOSFETs," IEEE Electron Device Lett., vol. 23, no. 4, pp.221-223, Apr. 2002.
9. C. C. Enz and Y. Cheng, "MOS transistor modeling for RF IC design," IEEE Jour. Solid-State Circ., vol. 35, no. 2, pp.186-201, Feb. 2000.
10. Y. Cheng and M. Matloubian, "On the high-frequency characteristics of substrate resistance in RF MOSFETs," IEEE Electron Device Lett., vol. 21, no. 12, pp. 604-606, Dec. 2000.