Group-V atoms exchange due to exposure of InP surface to AsH3(+PH3) revealed by x-ray CTR scattering

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 671-675

  Tabuchi, M ^a   Yamada, N ^a   Fujibayashi, K ^a   Takeda, Y ^a   Kamei, H ^a,b  

^a NAGOYA UNIVERSITY   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

Atoms exchange; Interface structure; OMVPE; Synchrotron radiation; X ray crystal truncation rod (CTR)

Indexed keywords

EID: 0001745608     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02666522     Document Type: Article

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