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Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 291-294

Crystal quality and surface structure of sapphire and buffer layers on sapphire revealed by crystal truncation rod scattering

(6) Tabuchi, Masao a Matsumoto, Nobuhiro a Takeda, Yoshikazu a Takeuchi, Tetsuya b Amano, Hiroshi b Akasaki, Isamu b

a NAGOYA UNIVERSITY (Japan)

b MEIJO UNIVERSITY (Japan)

Author keywords

AlN; GaN; Surface; X ray CTR

Indexed keywords

CRYSTAL GROWTH; NITRIDES; SAPPHIRE; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE STRUCTURE;

CRYSTAL TRUNCATION ROD MEASUREMENT;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0032094524 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00263-2 Document Type: Article

Times cited : (6)

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