SCOPUS 정보 검색 플랫폼

Volumn 159, Issue , 2000, Pages 432-440

Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; CRYSTALLINE MATERIALS; CRYSTALLIZATION; NITRIDING; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

GALLIUM INDIUM NITRIDE; X RAY CRYSTAL TRUNCATION ROD (CTR) SCATTERING METHOD; X RAY REFLECTIVITY MEASUREMENT;

SEMICONDUCTING FILMS;

EID: 0034205749 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(00)00042-8 Document Type: Article

Times cited : (6)

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