Plasma preconditioning of sapphire substrate for GaN epitaxy

Materials Science and Engineering B

Volumn 43, Issue 1-3, 1997, Pages 253-257

  Heinlein, Christian ^a   Grepstad, Jostein ^b   Riechert, Henning ^c   Averbeck, Robert ^c  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^c SIEMENS AG   (Germany)

Author keywords

Gallium nitride; Nitridation; Plasma cleaning; Sapphire

Indexed keywords

ANNEALING; HYDROGEN; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; NITRIDES; NITROGEN; PLASMA APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; SURFACE CLEANING; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM NITRIDE; PLASMA PRECONDITIONING;

SAPPHIRE;

EID: 0001018878     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01878-8     Document Type: Article

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