The effect of thermal annealing on the properties of Al-AlOx-Al single electron tunneling transistors

Journal of Applied Physics

Volumn 90, Issue 5, 2001, Pages 2528-2532

  Scherer, H ^a   Weimann, Th ^a   Zorin, A B ^a   Niemeyer, J ^a  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040028918     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1389077     Document Type: Article

References (24)

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