Gap states caused by oxygen precipitates and their hydrogen passivation in czochralski silicon crystals

Physica Status Solidi (B) Basic Research

Volumn 210, Issue 2, 1998, Pages 557-561

  Koizuka, M ^a   Yamada Kaneta, H ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032271590     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199812)210:2<557::AID-PSSB557>3.0.CO;2-9     Document Type: Article

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