SCOPUS 정보 검색 플랫폼

Volumn 321, Issue 1-2, 1998, Pages 86-91

Characterization of self-assembled Ge islands on Si(100) by atomic force microscopy and transmission electron microscopy

(7) Wohl G a Schollhorn C a Schmidt, O G b Brunner, K b,d Eberl, K b Kienzle, O c Ernst, F c

a UNIVERSITY OF STUTTGART (Germany)

b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

c MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS (Germany)

d WALTER SCHOTTKY INSTITUT (Germany)

Author keywords

Atomic force microscopy; Molecular beam epitaxy; Quantum structures; Self assembled Ge islands; Stranski Krastanov growth; Transmission electron microscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

STRANSKI-KRASTANOV GROWTH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0039557345 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)00453-2 Document Type: Article

Times cited : (12)

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