Non-selective growth of SiGe heterojunction bipolar trasistor layers at 700°C with dual control of n- and p-type dopant profiles

Journal of Materials Science: Materials in Electronics

Volumn 14, Issue 5-7, 2003, Pages 261-265

  El Mubarek, H A W ^a   Bonar, J M ^a   Ashburn, P ^a   Wang, Y ^b   Hemment, P ^b   Buiu, O ^c   Hall, S ^c  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CONCENTRATION (PROCESS); HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

DOPANT; NON-SELECTIVE GROWTH; SECONDARY ION MASS SPECTROSCOPY; SPECTROELLIPSOMETRY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0038825784     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1023947122399     Document Type: Article

References (16)

1. K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto and T. Harada, Proceedings of the International Electron Device Meeting, December 2000, p. 741.
2. G. Freeman, D. Ahlgren, D. R. Greenberg, R. Groves, F. Huang, G. Hugo, B. Jagannathan, S. J. Jeng, J. Hohnson, K. Schonenberg, K. Stein, R. Volant and S. Subbanna, Proceedings of the International Electron Device Meeting, December 1999, p. 569.
3. A. Schüppen, M. Tortschanoff, J. Berntgen, P. Maier, D. Zerrweck, H. Von Der Ropp, J. Tolonocs and K. Burger, Proceedings of the European Solid-State Device Research Conference, September 2000, p. 88.
4. T. Hashimoto, F. Sato, T. Aoyama, H. Suzuki, H. Yoshida, H. Fujii and T. Yamazaki, Proceedings of the International Electron Device Meeting, December 2000, p. 149.
5. W. Y. Leong, A. C. Churchill, D. J. Robbins and A. Lambert, Thin Solid Films 294 (1997) 274.
6. J. M. Bonar, J. Schiz and P. Ashburn, J. Mater. Sci.: Mater. Electron. 10 (1999) 345.
7. J. A. Wollam, B. Johs, C. M. Herzinger, J. Hilfiker, R. Synowicki and C. L. Bungay, Crit. Rev. Opt. Sci. Technol. CR72 (1999) 3.
8. E. A. Irene, Thin Solid Films 233 (1993) 96.
9. R. T. Carline, C. Pickering, D. J. Robbins, W. Y. Leong, A. D. Pitt and A. G. Cullis, Appl. Phys. Lett. 64 (1994) 1114.
10. C. Pickering and R. T. Carline, J. Appl. Phys. 75 (1994) 4642.
11. S. Zollner, J. J. Hildreth, R. Liu, P. Zaumseil, M. Weidner and B. Tillack, ibid. 88 (2000) 4102.
12. R. Reif, T. I. Kamins and K. C. Saraswat, J. Electrochem. Soc. 126 (1979) 644.
13. J. M. Bonar, PhD Thesis, Department of Electronics and Computer Science, University of Southampton, United Kingdom, (1996).
14. P. D. Agnello, T. O. Sedgwick and J. Cotte, J. Electrochem. Soc. 140 (1993) 2703.
15. A. J. Joseph, J. D. Cressler, D. M. Richey and G. Niu, IEEE Trans. Electron. Devices 46 (1999) 1347.
16. E. Kasper, H. Kibbel, H. J. Herzog and A. Gruhle, Jpn. J. Appl. Phys. Part 1 33 (1994) 2415.