Use of narrow collector layers in Si and Si1-xGex bipolar transistors

Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 274-277

  Leong, W Y ^a   Churchill, A C ^a   Robbins, D J ^a   Lambert, A ^a  

^a DRA   (United Kingdom)

Author keywords

Germanium; Heterojunction bipolar transistor; Narrow collector layers; Silicon

Indexed keywords

HETEROJUNCTIONS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

LOCOS PROCESS; NARROW COLLECTOR LAYERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031074706     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09227-9     Document Type: Article

References (2)

1. J.A. Appels, E. Kooi, M.M. Paffen, J.J.H. Schatorje and W.N.C.G. Verkujlen, Philips Res. Rep., 25 (1970) 118.
2. D.J. Robbins and I.M. Young, Appl. Phys. Lett., 50 (1987) 1575.