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Volumn , Issue , 2000, Pages 88-91

The proliferation of silicon germanium

Author keywords

[No Author keywords available]

Indexed keywords

BICMOS TECHNOLOGY; FLIP CHIP DEVICES; SILICON ALLOYS; SILICON WAFERS; SOLID STATE DEVICES;

EID: 84907859551     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2000.194723     Document Type: Conference Paper
Times cited : (6)

References (13)
  • 4
    • 84907858650 scopus 로고    scopus 로고
    • A SiGe PA module for CDMA applications
    • D. Osiaka, Mi Mitzen, W. Reinisch, C.-W. Chang, A. Schüppen, " A SiGe PA Module for CDMA Applications", Wireless Symposium, 2000, pp. 1-4
    • (2000) Wireless Symposium , pp. 1-4
    • Osiaka, D.1
  • 5
    • 79952616660 scopus 로고    scopus 로고
    • Record power add efficiency of bipolar transistors for low voltage wireless applications
    • F. Rijs, H. Visser, P. Magnee, "Record power add efficiency of bipolar transistors for low voltage wireless applications," IEDM Tech. Dig. (1998), pp. 35.4.1-35.4.4.
    • (1998) IEDM Tech. Dig. , pp. 3541-3544
    • Rijs, F.1    Visser, H.2    Magnee, P.3
  • 6
    • 0033098895 scopus 로고    scopus 로고
    • Characterization of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe-HBT's
    • I. M. Anteney, G. Lippert, P. Ashburn, H.J. Osten, B. Heinemann, G.J. Parker, D. Knoll, " Characterization of the Effectiveness of Carbon Incorporation in SiGe for the Elimination of Parasitic Energy Barriers in SiGe-HBT's" IEEE Elec. Dev. Lett., Vol. 20, No3. 1999, pp. 116-118
    • (1999) IEEE Elec. Dev. Lett. , vol.20 , Issue.3 , pp. 116-118
    • Anteney, I.M.1    Lippert, G.2    Ashburn, P.3    Osten, H.J.4    Heinemann, B.5    Parker, G.J.6    Knoll, D.7
  • 7
    • 0033360213 scopus 로고    scopus 로고
    • High efficiency 0.4um gate LDMOS power FET for low volateg wireless communications
    • Anaheim, June
    • G. Ma, W. Burger, M. Shields, "High efficiency 0.4um gate LDMOS power FET for low volateg wireless communications ", 1999 MTT Symposium Digest, pp, Anaheim, June, 1999, pp. 1195-1198
    • (1999) 1999 MTT Symposium Digest , pp. 1195-1198
    • Ma, G.1    Burger, W.2    Shields, M.3
  • 9
    • 0031635772 scopus 로고    scopus 로고
    • 63.2% high efficiency and high linearity two-stage InGaP/GaAs HBT Power amplifier for personal Digital Cellular Phone System
    • June
    • T. Iwai, S. Ohara, T. Miyashita, K. Joshin, "63.2% high efficiency and high linearity two-stage InGaP/GaAs HBT Power amplifier for personal Digital Cellular Phone System", 1998 MTT Symposium Digest, Baltimore, June, 1997,. pp.435-438
    • (1997) 1998 MTT Symposium Digest, Baltimore , pp. 435-438
    • Iwai, T.1    Ohara, S.2    Miyashita, T.3    Joshin, K.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.