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Technology and components for mobile communication systems
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Trends in silicon Germanium BiCMOS integration and reliability
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J. Dunn, D. Harame, S. St. Onge, A. Joseph, N. Feilchenfeld, K. Watson, S. Subbanna, " Trends in Silicon Germanium BiCMOS Integration and Reliability", IEEE 00CH37059, 38th Annual Int. Realiability Physics Symp., San Jose California, 2000, pp. 237-241
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0001883980
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Overview of SiGe transistors for RF applications
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June
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D. Barlas, G. Henderson, X. Zhang, M. Bopp, A. Schüppen , "Overview of SiGe transistors for RF applications,", Microwave Journal,vol. 42, no. 6., June, 1999, pp.22-39.
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Barlas, D.1
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84907858650
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A SiGe PA module for CDMA applications
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D. Osiaka, Mi Mitzen, W. Reinisch, C.-W. Chang, A. Schüppen, " A SiGe PA Module for CDMA Applications", Wireless Symposium, 2000, pp. 1-4
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Characterization of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe-HBT's
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High efficiency 0.4um gate LDMOS power FET for low volateg wireless communications
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Anaheim, June
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Ma, G.1
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A 2W, 65% PAE single-supply enhancement-mode power PHEMT for 3V PCS applications
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June
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D. Wu, R. Parkhurst, S. Fu, J. Wei, C. Su, S. Chang, D. Moy, W. Fields, P. Chye, R. Levitsky,"A 2W, 65% PAE single-supply enhancement-mode power PHEMT for 3V PCS applications", 1997 MTT Symposium Digest, , Denver, June, 1997, pp.1319-1322
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63.2% high efficiency and high linearity two-stage InGaP/GaAs HBT Power amplifier for personal Digital Cellular Phone System
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June
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T. Iwai, S. Ohara, T. Miyashita, K. Joshin, "63.2% high efficiency and high linearity two-stage InGaP/GaAs HBT Power amplifier for personal Digital Cellular Phone System", 1998 MTT Symposium Digest, Baltimore, June, 1997,. pp.435-438
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Iwai, T.1
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A true enhancement mode device technology suitable for dual mode dual band power amplifier applications
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June
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E. Glass, J. Huang, M. Martinez, W. Peatman, O. Hartin, W. Valentine, M. LaBelle, J. Costa, K. Johnson, "A true enhancement mode device technology suitable for dual mode dual band power amplifier applications", RFIC Symposium Digest, , Anaheim, June, 1999, pp. 135-138
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Glass, E.1
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12
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Application of a production ready SiGe HBT Process to 1.9 5.7 and 10 GHz Low Noise MMIĆs Top
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U. Erben, H. Schumacher, A. Schüppen, H. Dietrich and J. Arndt " Application of a Production Ready SiGe HBT Process to 1.9, 5.7 and 10 GHz Low Noise MMIĆs, Top. Meet. on Si Monolithic ICs in RF Systems: IEEE, Michigan, 1998, pp. 100-104
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Erben, U.1
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13
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0344178375
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SiGe Circuits for High Bit-rate Optical transmission systems
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B. Wedding, W. Poehlmann, D. Schump, E. Schlag, R. Ballentin, " SiGe Circuits for High Bit-rate Optical transmission systems" ISCAS, 1999, pp.
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ISCAS
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Wedding, B.1
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