Selective and non-selective growth of self-aligned SiGe HBT structures by LPCVD epitaxy

Journal of Materials Science: Materials in Electronics

Volumn 10, Issue 5, 1999, Pages 345-349

  Bonar, J M ^a   Schiz, J ^a   Ashburn, P ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; HETEROJUNCTION BIPOLAR TRANSISTORS; MORPHOLOGY; OPTICAL MICROSCOPY; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR GROWTH;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); NOMARSKI CONTRAST OPTICAL MICROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032666236     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/a:1008941305859     Document Type: Article

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