Fmax enhancement in InP-based DHBTs using a new lateral reverse-etching technique

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2003, Pages 22-25

  Jeong, Yongsik ^a   Song, Yongjoo ^a   Choi, Sunkyu ^a   Yoon, Myounghoon ^a   Yang, Kyounghoon ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC NETWORK ANALYZERS; ETCHING; EXTRAPOLATION; SCANNING ELECTRON MICROSCOPY; SCATTERING PARAMETERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; ELECTRIC BREAKDOWN; FABRICATION; GALLIUM ARSENIDE; GALLIUM PHOSPHIDE; HETEROJUNCTIONS; INDIUM; INDIUM PHOSPHIDE; WET ETCHING;

BASE-COLLECTOR JUNCTION CAPACITANCE; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; LATERAL REVERSE-ETCHING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

CHEMICAL TECHNOLOGIES; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; FREQUENCY; INDIUM GALLIUM ARSENIDE; MICROWAVE THEORY AND TECHNIQUES;

EID: 0038825261     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. max InP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE", IEEE Electron Device Letters, vol. 18, pp. 553-555, 1997
2. W.E. Stanchina, M. Sokolich, and K.R. Elliott, "Process and integration technologies for InP ICs", IPRM, pp. 489-492, 2001
3. S. Blayac, M. Riet, J.L. Benchimol, P. Berdaguer, N. Kauffman, J. Godin, A. Scavennec, "Lateral design of InP/InGaAs DHBTs for 40 Gbit/s ICs", IPRM, pp. 481-484, 2000
4. max InP/InGaAs double-heterojunction bipolar transistors with a new hexagonal-shaped emitter", GaAs IC Symposium, pp.163-166, 1995
5. Y. Miyamoto, J.M.M. Rios, A.G. Dentai, and S. Chandrasekhar, "Reduction of base-collector capacitance by undercutting the collector and subcollector in GaInAs/InP DHBT's", IEEE Electron Device Letters, vol. 17, pp.97-99, 1996
6. A. Gutierrez-Aitken, E. Kaneshiro, B. Tang, J. Notthoff, P. Chin, D. Streit, and A. Oki, "69 GHz frequency divider with a cantilevered base InP DHBT", International IEDM Technical Digest, Electron Devices Meeting, pp. 779-782, 1999
7. max=425GHz", Electronics Letters, vol. 37, pp. 1096-1098, 2001
8. Sadao Adachi and Hitoshi Kawaguchi, "Chemical etching characteristics of (001)InP", J. Electrochem. Soc., vol. 128, pp. 1342-1349, 1981
9. 0.47-As masks", J. Electrochem. Soc., vol. 141, pp.1594-1599, 1994
10. Kenji Kurishima, Shoji Yamahata, Hiroki Nakajima, Hiroshi Ito, and Noriyuki Watanabe, "Initial degradation of base-emitter junction in carbon-doped InP/InGaAs HBT's under bias and temperature stress", IEEE Electron Device Letters, vol. 19, pp. 303-305, 1998
11. Moonjung Kim, Taeho Kim, Sookun Jeon, Myounghoon Yoon, Young-Se Kwon and Kyounghoon Yang, "Performance of new self-aligned InP/InGaAs HBT's using crystallographically defined emitter contact technology", IPRM, pp. 220-223, 2001
12. Yongjoo Song and Kyounghoon Yang, "Reduction of extrinsic base-collector capacitance in InP/InGaAs SHBTs using a new base pad design", IPRM, pp. 165-168, 2002