Reduction of extrinsic base-collector capacitance in InP/InGaAs SHBTs using a new base pad design

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2002, Pages 165-168

  Song, Yongjoo ^a   Yang, Kyounghoon ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTAL ORIENTATION; ETCHING; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

EXTRINSIC BASE-COLLECTOR CAPACITANCES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036045641     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. Submicron scaling of HBTs
2. Process and integration technologies for InP ICs
3. Improved InGaAs/InP DHBT technology for 40 Gbit/s optical communication circuits
4. Application of micro-airbridge isolation in high speed HBT fabrication
5. Reduction of base-collector capacitance in InP/InGaAs HBT's using a novel double polyimide planarization process
6. Performance of new self-aligned InP/InGaAs HBT's using crystallographically defined emitter contact technology
7. Initial degradation of base-emitter junction in carbon-doped InP/InGaAs HBTs under bias and temperature stress
8. A semianalytical parameter-extraction procedure for HBT equivalent circuit
9. An HSPICE HBT model for InP-based single HBT's