Performance of new self-aligned InP/InGaAs HBT's using crystallographically defined emitter contact technology

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2001, Pages 220-223

  Kim, M ^a   Kim, T ^a   Jeon, S ^a   Yoon, M ^a   Kwon, Y S ^a   Yang, K ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; ELECTRODES; ETCHING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING;

EMITTER CONTACT TECHNOLOGY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034853531     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. max InP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE
2. High speed InGaAs/InP HBT- Based OEIC photoreceivers
3. max = 200 GHz
4. max InAlAs/InGaAs heterojunction bipolar transistors
5. Submicron lateral scaling of HBTs and other vertical-transport devices: Toward THz bandwidths
6. 2
7. Sub-micron, fully self-aligned HBT with an emitter geometry of 0.3 μm
8. Novel self-aligned sub-micron emitter InP/InGaAs HBT's using T-shaped emitter electrode
9. Ultrahigh-speed InP/InGaAs double-heterojunction bipolar transistors and analyses of their operation
10. Fabrication of novel self-aligned InP/InGaAs HBT's using dummy emitter
11. A Self-consistent method for complete small-signal parameter extraction of InP - Based heterojunction bipolar transistors
12. A semianalytical parameter-extraction procedure for HBT equivalent circuit