DC and RF Performance of InAs-Based Bipolar Transistors at Very Low Bias

Proceedings IEEE Lester Eastman Conference on High Performance Devices

Volumn , Issue , 2002, Pages 281-286

  Sawdai, D ^a   Monier, C ^a   Cavus, A ^a   Block, T ^a   Sandhu, R ^a   Goorsky, M S ^b   Gutierrez Aitken, A ^a   Woodall, J ^c   Wicks, G ^d  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Yale University   (United States)

^d UNIVERSITY OF ROCHESTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON MOBILITY; MICROWAVES; SEMICONDUCTING INDIUM COMPOUNDS;

LOW BIAS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0038090963     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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6. S.S. Lu, and C.C. Wu, "High-current-gain small-offset-voltage InGaP/GaAs tunneling emitter bipolar transistors grown by gas source molecular beam epitaxy," IEEE Electron Dev. Lett., vol. 13, pp. 468-470, 1992.
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