InAs-based heterojunction bipolar transistors

Electronics Letters

Volumn 38, Issue 7, 2002, Pages 344-346

  Maimon, S ^a   Averett, K L ^a   Wu, X ^a   Koch, M W ^a   Wicks, G W ^a  

^a UNIVERSITY OF ROCHESTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ENERGY GAP; GAIN MEASUREMENT; HETEROJUNCTIONS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DIODES;

HOMOJUNCTION; INDIUM ARSENIDE-BASED HETEROJUNCTION BIPOLAR TRANSISTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0037187683     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020214     Document Type: Article

References (8)

1. Measurement of the hot-electron conductivity in semiconductors using ultrafast electric pulses
2. The electrical characterization of semiconductors: Measurement of minority carrier properties
3. Heterostructure bipolar transistors: What should we build?
4. Demonstration of npn InAs bipolar transistors with inverted base doping