Demonstration of npn InAs bipolar transistors with inverted base doping

IEEE Electron Device Letters

Volumn 17, Issue 4, 1996, Pages 166-168

  Dodd, Paul E ^a,b   Lovejoy, Michael L ^a,b   Lundstrom, Mark S ^a,c   Melloch, Michael R ^a,c   Woodall, Jerry M ^a,c   Pettit, David ^d  

^a IEEE

^b SANDIA NATIONAL LABORATORIES   (United States)

^c PURDUE UNIVERSITY   (United States)

^d IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOSTATS; CRYSTAL STRUCTURE; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; THICK FILMS;

CURRENT GAIN; EMITTER DOPING DENSITY; INVERTED BASE DOPING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030126686     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.485162     Document Type: Article

References (13)

1. K. Ohla, "Scaling principle for heterojunction bipolar integrated circuit." Jpn. J. Appl. Phys., vol. 23, no. 12, pp. L913-L915, 1984.
2. K. Yoh, T. Moriuchi, and M. Inoue, "An InAs channel heterojunction field-effect transistor with high transconductance," IEEE Electron Device Lett., vol. 11, no. 11, pp. 526-528, 1990.
3. X. Li, F. Longenbach, Y. Wang, and W. I. Wang, "High-breakdown-voltage AlSbAs/InAs n-channel field-effect transistors," IEEE Electron. Device Lett., vol. 13, no. 4, pp. 192-194, 1992.
4. C. R. Bolognesi, E. J. Caine, and H. Kroemer, "Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors," IEEE Electron Device Lett., vol. 15, no. 1, pp. 16-18, 1990.
5. E. R. Brown, J. R. Söderström, C. D. Parker, L. J. Mahoney, K. M. Molvar, and T. C. McGill, "Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes at room temperature," Appl. Phys. Lett., vol. 58, no. 20, pp. 2291-2293, 1991.
6. J. J. Pekarik, H. Kroemer, and J. H. English, "An AlSb-InAs-AlSb double-heterojunction P-n-P bipolar transistor," J. Vac. Sci. Technol. B, vol. 10, no. 2, pp. 1032-1034, 1992.
7. 0.53As, and InAs bipolar transistors," IEDM Tech. Dig., pp. 435-438, 1990.
8. K. Yano et al. "Low temperature pseudo HBT utilizing bandgap narrowing effect," in Ext. Abst. 20th Conf. Solid State Devices Materials, 1988, p. 617.
9. K. Yano, K. Nakazato, M. Miyamoto, M. Aoki, and K. Shimohigashi, "A high-current-gain low-temperature pseudo-HBT utilizing a sidewall base-contact structure (SICOS)," IEEE Electron Device Lett., vol. 10, no. 10, pp. 452-154, 1989.
10. P. E. Dodd, M. S. Lundstrom, and M. R. Melloch, "High-gain, low-leakage GnAs pseudo-HBT's for operation in reduced temperature environments," IEEE Electron Device Lett., vol. 12, no. 11, pp. 629-631, 1991.
11. E. S. Harmon, M. R. Melloch, and M. S. Lundstrom, "Effective bandgap shrinkage in GaAs," Appl. Phys. Lett., vol. 64, pp. 502-504, 1994.
12. C. A. Mead and W. G. Spitzer, "Fermi level position at semiconductor surfaces," Phys. Rev. Lett., vol. 10, no. 11, pp. 471-172, 1963.
13. x/Si heterojunction diodes and their temperature dependence," in Proc. High-Speed Electron Dev. Scaling. SPIE vol. 1288, pp. 200-210, 1990.