Undamped ion circulation in an insulating layer near the semiconductor surface induced by electron-ion interaction at the interface

Russian Microelectronics

Volumn 27, Issue 5, 1998, Pages 286-290

  Gol'dman, E I ^a   Zhdan, A G ^a   Chucheva, G V ^a  

^a INST OF RADIO ENG AND ELECTRONICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3342892394     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

1. Gol'dman, E.I., Zhdan, A.G., and Chucheva, G.V., Determination of the Coefficients of Ion Transfer in Insulating Layers on Semiconductor Surfaces from the Dynamic Current-Voltage Characteristics of Depolarization, Prib. Tekh. Eksp., 1997, no. 6, pp. 110-115.
2. Gol'dman, E.I., Zhdan, A.G., and Chucheva, G.V., Kinetics of Ion Depolarization in Si MOS Structures under a Linear Voltage Sweep Mode, Fiz. Tekh. Poluprovodn. (St. Petersburg), 1997, vol. 31, no. 12, pp. 1468-1473.
3. Sze, S.M., Physics of Semiconductor Devices, 2 vols., New York: Wiley, 1981. Translated under the title Fizika poluprovodnikovykh priborov, Moscow: Mir, 1984.
4. Sze, S.M., Physics of Semiconductor Devices, 2 vols., New York: Wiley, 1981. Translated under the title Fizika poluprovodnikovykh priborov, Moscow: Mir, 1984.
5. 2 Films, Thin Solid Films, 1976, vol. 36, pp. 435-439.
6. Hofstein, S.R., Space-Charge-limited Ionic Currents in Silicon Dioxide Films, Appl. Phys. Lett., 1967, vol. 10, no. 10, pp. 291-293.
7. 2 Layers, Rep. Prog. Phys., 1990, vol. 53, pp. 1297-1331.
8. Lundstrom, I. and Svensson, C., Tunneling to Traps in Insulators, J. Appl. Phys., 1972, vol. 43, pp. 5045-5047.
9. Scher, H. and Montroll, E.W., Anomalous Transit-Time Dispersion in Amorphous Solids, Phys. Rev. B: Condens. Matter, 1975, vol. 12, pp. 1255-1277.
10. Zvyagin, I.P., Kineticheskie yavleniya v neuporyadochennykh poluprovodnikakh (Kinetic Phenomena in Disordered Semiconductors), Moscow: Izd. Mosk. Gos. Univ., 1984.