Ion neutralization effects at a semiconductor-insulator interface produced as a result of space-charge thermal depolarization of MOS structures

Semiconductors

Volumn 33, Issue 3, 1999, Pages 308-312

  Goldman, E I ^a   Zhdan, A G ^a   Kukharskaya, N F ^a  

^a INST OF RADIO ENG AND ELECTRONICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033095349     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187685     Document Type: Article

References (14)

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