Ion transfer processes in an insulating layer containing traps

Semiconductors

Volumn 31, Issue 1, 1997, Pages 36-40

  Gol'dman, E I ^a  

^a INST OF RADIO ENG AND ELECTRONICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039329840     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187048     Document Type: Article

References (10)

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3. Yu. A. Gorokhovatskiǐ and G. A. Bordovskiǐ, Thermally Stimulated Current Spectroscopy of High-Resistance Semiconductors and Insulators [in Russian], Nauka, Moscow (1991).
4. T. W. Hickmott, J. Appl. Phys. 51, 4269 (1980).
5. A. G. Zhdan and Yu. V. Markin, Fiz. Tekh. Poluprovodn. 28, 756 (1994) [Semiconductors 28, 444 (1994)].
6. A. G. Zhdan and Yu. V. Markin, Fiz. Tekh. Poluprovodn. 28, 756 (1994) [Semiconductors 28, 444 (1994)].
7. K. Kao and V. Huang, Electron Transfer in Solids [Russian translation], Vol. 2, Mir, Moscow (1994), p. 56.
8. E. I. Gol'dman, A. G. Zhdan, and A. N. Ponomarev, Fiz. Tekh. Poluprovodn. 28, 1947 (1994) [Semiconductors 28, 1073 (1994)].
9. E. I. Gol'dman, A. G. Zhdan, and A. N. Ponomarev, Fiz. Tekh. Poluprovodn. 28, 1947 (1994) [Semiconductors 28, 1073 (1994)].
10. R. Chen and Y. Kirsh, Analysis of Thermally Stimulated Processes (Science of the Solid State, Vol. 15), Pergamon Press, New York (1981).