Conductivity of the insulating (oxide) layer on the surface of a semiconductor caused by electron-ion interaction at the insulator-semiconductor boundary

Semiconductors

Volumn 33, Issue 8, 1999, Pages 852-857

  Goldman, E I ^a   Zhdan, A G ^a   Chucheva, G V ^a  

^a INST OF RADIO ENG AND ELECTRONICS   (Russian Federation)

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Indexed keywords

EID: 0033177733     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187797     Document Type: Article

References (29)

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