Void-mediated formation of Sn quantum dots in a Si matrix

Applied Physics Letters

Volumn 82, Issue 24, 2003, Pages 4262-4264

  Lei, Y ^a   Mock P ^a,c   Topuria, T ^a   Browning, N D ^a   Ragan, R ^b,d   Min, K S ^b,e   Atwater, H A ^b  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b California Institute of Technology   (United States)

^c PORTLAND STATE UNIVERSITY   (United States)

^d HEWLETT PACKARD LABORATORIES   (United States)

^e INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; DISLOCATIONS (CRYSTALS); ELECTRON ENERGY LOSS SPECTROSCOPY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SURFACE CHEMISTRY; TIN;

ATOMIC SCALE ANALYSIS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0038787836     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1584073     Document Type: Article

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