Effect of As molecular species on inter-surface diffusion in GaAs MBE for ridge structure fabrication

Journal of Crystal Growth

Volumn 226, Issue 2-3, 2001, Pages 179-184

  Ogura, T ^a   Kishimoto, D ^b   Nishinaga, T ^a,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c MEIJO UNIVERSITY   (Japan)

Author keywords

A1. Diffusion; A3. Molecular beam epitaxy; B1. Gallium compounds; B2. Semiconducting gallium arsenide; B2. Semiconducting gallium compounds; B2. Semiconducting III V materials

Indexed keywords

INTERDIFFUSION (SOLIDS); MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SHRINKAGE;

INTER-SURFACE DIFFUSION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035367293     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01020-X     Document Type: Article

References (11)