Studies on inclined nuclei as a cause of crystallinity deterioration in epitaxial CeO2 (1 1 0) layers on Si(1 0 0) substrates

Journal of Crystal Growth

Volumn 253, Issue 1-4, 2003, Pages 366-373

  Inoue, Tomoyasu ^a   Shida, Shigenari ^a   Sakamoto, Naomichi ^a   Horikawa, Akihiro ^a   Ohashi, Masayuki ^a  

^a IWAKI MEISEI UNIVERSITY   (Japan)

Author keywords

A1. Characterization; A1. Crystal morphology; A1. Defects; A1. Transmission electron microscopy; B1. Oxides; B2. Dielectric materials

Indexed keywords

CERIUM COMPOUNDS; CRYSTAL DEFECTS; DIELECTRIC MATERIALS; MORPHOLOGY; OXIDES; SILICON; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINITY DETERIORATION;

EPITAXIAL GROWTH;

EID: 0038625082     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01092-3     Document Type: Article

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