Surface structure of single-crystal CeO2 layers grown on Si

Thin Solid Films

Volumn 281-282, Issue 1-2, 1996, Pages 24-27

  Inoue, Tomoyasu ^a   Yamamoto, Yasuhiro ^b   Satoh, Masataka ^b   Ide, Atsushi ^a   Katsumata, Shunji ^a  

^a IWAKI MEISEI UNIVERSITY   (Japan)

^b HOSEI UNIVERSITY   (Japan)

Author keywords

CeO2; Surface structure

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; MORPHOLOGY; SILICON WAFERS; SINGLE CRYSTALS; STOICHIOMETRY; SURFACE ROUGHNESS; SURFACE STRUCTURE; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

CERIUM DIOXIDE; HILLOCK STRUCTURE; PERIODICALLY CORRUGATED STRUCTURE; QUANTITATIVE ANALYSIS;

CERIUM COMPOUNDS;

EID: 0008580045     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(96)08566-5     Document Type: Article

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