Ga-induced nano-facet formation on Si(1 1 n) surfaces

Applied Surface Science

Volumn 212-213, Issue SPEC., 2003, Pages 334-338

  Nakahara, H ^a   Suzuki, H ^a   Miyata, S ^a   Ichimiya, A ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Gallium; High index single crystal surfaces; Morphology; Roughness and topography; Scanning tunneling microscopy (STM); Silicon; Single crystal surfaces; Surface structure

Indexed keywords

MORPHOLOGY; NANOSTRUCTURED MATERIALS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM; SINGLE CRYSTALS; SURFACE ROUGHNESS; SURFACE STRUCTURE;

SINGLE CRYSTAL SURFACES;

SEMICONDUCTING SILICON;

EID: 0038580286     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00096-5     Document Type: Conference Paper

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