Structural investigation of Si/SiGe superlattices on vicinal (113) oriented Si

Thin Solid Films

Volumn 357, Issue 1, 1999, Pages 71-75

  Stangl, J ^a   Holy, V ^a   Grim, J ^a   Bauer, G ^a   Zhu, J ^b   Brunner, K ^b   Abstreiter, G ^b   Kienzle, O ^c   Ernst, F ^c  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b WALTER SCHOTTKY INSTITUT   (Germany)

^c MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; INTERFACES (MATERIALS); MORPHOLOGY; MULTILAYERS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS;

SILICON GERMANIDE;

SEMICONDUCTOR SUPERLATTICES;

EID: 0033340847     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00478-2     Document Type: Article

References (7)

1. Tersoff J., Phang Y.H., Zhang Z., Lagally M.G. Phys. Rev. Lett. 75:1995;2730.
2. Lin F., Tersoff J., Lagally M.G. Phys. Rev. Lett. 80:1998;1268.
3. Zhu J., Brunner K., Abstreiter G. Appl. Phys. Lett. 73:1998;620.
4. Zhu J., Brunner K., Abstreiter G. Appl. Phys. Lett. 73:1998;2438.
5. Holy V., Darhuber A.A., Stangl J., Bauer G., Nützel J., Abstreiter G. Phys. Rev. B. 57:1998;12435.
6. Phang Y.H., Teichert C., Lagally M.G., Peticolas L.J., Bean J.C., Kasper E. Phys. Rev. B. 50:1994;14435.
7. Darhuber A.A., Zhu J., Holy V., Stangl J., Brunner K., Abstreiter G., Bauer G. Appl. Phys. Lett. 73:1998;1535.