Model for negative bias temperature instability in p-MOSFETs with ultrathin oxynitride layers

Journal of Non-Crystalline Solids

Volumn 322, Issue 1-3, 2003, Pages 100-104

  Houssa, M ^a   Parthasarathy, C ^b   Espreux, N ^a   Revil, N ^b   Autran, J L ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); INTERFACES (MATERIALS); SILICON NITRIDE; STRAIN; THRESHOLD VOLTAGE;

ELECTRICAL STRESSES;

MOSFET DEVICES;

EID: 0038449166     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(03)00186-8     Document Type: Conference Paper

References (12)

1. Helms C.R., Poindexter E.H. Rep. Prog. Phys. 57:1994;791. and references therein.
2. Yamamoto T., Uwasawa K., Mogami T. IEEE Trans. Electron Devices. 46:1999;921.
3. Kimizuka N., Yamaguchi K., Imai K., Izuka T., Liu C.T., Keller R.C., Horiuchi T. 2000 Symposium On VLSI Technology. 2000;92 IEEE, NJ.
4. Stesmans A. Phys. Rev. B. 61:2000;8393.
5. DiMaria D.J., Stathis J.H. J. Appl. Phys. 89:2001;5015.
6. Brown D.B., Saks N.S. J. Appl. Phys. 70:1991;3734.
7. Cartier E., Stathis J.H., Buchanan D.A. Appl. Phys. Lett. 63:1993;1510.
8. Stesmans A. J. Appl. Phys. 92:2002;1317.
9. Houssa M., Autran J.L., Stesmans A., Heyns M.M. Appl. Phys. Lett. 81:2002;709.
10. Foley E.T., Kam A.F., Lyding J.W., Avouris Ph. Phys. Rev. Lett. 80:1998;1336.
11. Lucovski G., Wu Y., Niimi H., Misra V., Phillips J.C. Appl. Phys. Lett. 74:1999;2005.
12. Ushio J., Maruizumi T., Miyao M. Appl. Phys. Lett. 75:1999;680.