Influence of substrate temperature on the etching of silver films using inductively coupled Cl2-based plasmas

Surface and Coatings Technology

Volumn 171, Issue 1-3, 2003, Pages 285-289

  Park, S D ^a   Lee, Y J ^a   Kim, S G ^b   Choe, H H ^b   Hong, M P ^b   Yeom, G Y ^a  

^a Sungkyunkwan University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Cl2 based plasma; Etch product; Etching; Silver (Ag); Substrate temperature

Indexed keywords

INDUCTIVELY COUPLED PLASMA; METALLIC FILMS; PHOTORESISTS; SILVER; SUBSTRATES; THERMAL EFFECTS; VAPOR PRESSURE; VAPORIZATION;

SILVER FILMS;

ETCHING;

ETCHING; FILM; PLASMA TREATMENT; SILVER; TEMPERATURE EFFECT;

EID: 0038382889     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(03)00287-1     Document Type: Article

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