Triple crystal diffractometry, x-ray standing wave, and transmission electron microscopy investigation of shallow BF2 implantation in Si

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1436-1443

  Bocchi, C ^a   Germini, F ^a   Ghezzi, G ^a   Gombia, E ^a   Mosca, R ^a   Nasi, L ^a   Mukhamedzhanov, E Kh ^b   Privitera, V ^c   Spinella, C ^c  

^a CNR   (Italy)

^b SHUBNIKOV INSTITUTE OF CRYSTALLOGRAPHY   (Russian Federation)

^c CNR IMETEM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; CRYSTAL DEFECTS; INTERFACES (MATERIALS); ION IMPLANTATION; NANOSTRUCTURED MATERIALS; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING BORON; SILICON WAFERS; STRAIN RATE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

IMPLANTATION ENERGY; TRIPLE CRYSTAL DIFFRACTOMETRY; X RAY STANDING WAVE;

SEMICONDUCTING SILICON;

EID: 0035982553     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1491548     Document Type: Conference Paper

References (26)