Spectro-ellipsometric studies of amorphization and thermal annealing in ion-implanted silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 12 A, 1996, Pages 5929-5936

  Lee, Soonil ^a   Kim, Sang Youl ^a   Oh, Soo Ghee ^a  

^a Ajou University   (South Korea)

Author keywords

Amorphous; Annealing; Damage; Ion implantation; Silicon; Spectroscopic ellipsometry

Indexed keywords

BRUGGEMAN'S EFFECTIVE MEDIUM APPROXIMATION; DIELECTRIC FUNCTIONS; SPECTROSCOPIC ELLIPSOMETRY (SE) TECHNIQUE;

AMORPHIZATION; ANNEALING; APPROXIMATION THEORY; COMPUTER SIMULATION; CRYSTALLINE MATERIALS; CRYSTALLIZATION; ELLIPSOMETRY; EPITAXIAL GROWTH; ION IMPLANTATION; MATHEMATICAL MODELS; NONDESTRUCTIVE EXAMINATION; THERMAL EFFECTS;

AMORPHOUS SILICON;

EID: 0030380014     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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