Real time spectroscopic ellipsometry monitoring of the SiC growth during the interaction process of elemental carbon with Si surfaces

Thin Solid Films

Volumn 364, Issue 1, 2000, Pages 28-32

  Wohner T ^a   Cimalla, V ^a   Stauden, Th ^a   Schaefer, J A ^a   Pezoldt, J ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CARBONIZATION; CRYSTAL ORIENTATION; ELLIPSOMETRY; FILM GROWTH; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SPECTROSCOPIC ANALYSIS; SURFACE ROUGHNESS;

REAL TIME SPECTROSCOPIC ELLIPSOMETRY (SE);

SEMICONDUCTING FILMS;

EID: 0038331017     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00918-9     Document Type: Article

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