Time-dependent-dielectric breakdown used to assess copper contamination impact on inter-level dielectric reliability

International Integrated Reliability Workshop Final Report

Volumn , Issue , 2000, Pages 189-190

  Gonella, R ^a   Motte, P ^a   Torres, J ^a  

^a STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DIELECTRIC PROPERTIES; DIFFUSION IN SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; LEAKAGE CURRENTS; MOS CAPACITORS; SILICA;

COPPER CONTAMINATION; INTER-LEVEL DIELECTRIC (ILD); TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

SEMICONDUCTOR DEVICE TESTING;

EID: 0034428735     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)