Some investigations on the anisotropy of the chemical etching of (h k 0) and (hh 1) silicon plates in a NaoH 35% solution. Part II: 3D etching shapes, analysis and comparison with KOH 56%

Active and Passive Electronic Components

Volumn 24, Issue 4, 2001, Pages 243-264

  Tellier, C R ^a,b   Hodebourg, C A ^a   Durand, S ^c  

^a Laboratoire de Chronom6trie Electronique et PiezoOlectricitO   (France)

^b Avenue de l'Observatoire   (France)

^c UNIVERSITÉ DU MAINE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ETCHING; CRYSTALLOGRAPHIC PLANE; DISSOLUTION OF CRYSTALS; MESA STRUCTURE; MICROMACHINED STRUCTURES; SILICON PLATES; STEREOGRAPHIC ANALYSIS;

ANISOTROPY; CRYSTALLOGRAPHY; DISSOLUTION; ETCHING; MICROMACHINING; SINGLE CRYSTALS;

THREE DIMENSIONAL;

EID: 0038263490     PISSN: 08827516     EISSN: 15635031     Source Type: Journal    
DOI: 10.1155/2001/73462     Document Type: Article

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