Improved reliability for gate dielectric of low-temperature polysilicon thin-film transistors by NO-plasma nitridation

Solid-State Electronics

Volumn 47, Issue 8, 2003, Pages 1391-1395

  Or, David C T ^a   Lai, P T ^a   Sin, J K O ^b   Xu, J P ^c  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^c HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

High field stress; Hot carrier stress; Low temperature processing; Nitridation; NO; Plasma; Polysilicon thin film transistor

Indexed keywords

DIELECTRIC DEVICES; LOW TEMPERATURE EFFECTS; NITRIDING; POLYSILICON;

HIGH-FIELD STRESS;

THIN FILM TRANSISTORS;

EID: 0038249171     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00011-X     Document Type: Article

References (7)

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