Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation

Microelectronics Reliability

Volumn 43, Issue 1, 2003, Pages 163-166

  Or, David C T ^c   Lai, P T ^c   Sin, J K O ^c   Kwok, P C K ^a   Xu, J P ^b  

^a OPEN UNIVERSITY OF HONG KONG   (Hong Kong)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; LOW TEMPERATURE ENGINEERING; NITRIDING; NITROGEN OXIDES; PLASMA APPLICATIONS; RELIABILITY; SILICON WAFERS; STRESSES;

PLASMA NITRIDATION;

MOS CAPACITORS;

EID: 0037224357     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00284-6     Document Type: Article

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