Noise reduction of pHEMTs with plasmaless SiN passivation by catalytic CVD

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1997, Pages

  Hattori, R ^a   Nakamura, G ^a   Nomura, S ^a   Ichise, T ^a   Masuda, A ^a   Matsumura, H ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; NOISE ABATEMENT; PASSIVATION; PERFORMANCE; SILICON NITRIDE;

NOISE REDUCTION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031387933     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)