BST thin films grown in a multiwafer MOCVD reactor

Journal of the European Ceramic Society

Volumn 21, Issue 10-11, 2001, Pages 1547-1551

  Fitsilis, F ^a   Regnery, S ^a,b   Ehrhart, P ^a   Waser, R ^a   Schienle, F ^b   Schumacher, M ^b   Dauelsberg, M ^b   Strzyzewski, P ^b   Juergensen, H ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

BaTiO3 and titanates; Dielectric properties; Electrical properties; Thin films; X ray methods

Indexed keywords

BARIUM COMPOUNDS; ELECTRIC PROPERTIES; MICROSTRUCTURE; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

PLANETARY MULTI WAFER REACTOR;

THIN FILMS;

CERAMICS;

EID: 0034893978     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0955-2219(01)00061-9     Document Type: Article

References (7)

1. High-permittivity perovskite thin films for dynamic random-access memories
2. MOCVD of ferroelectric oxide thin films for electronic and optical applications
3. 3 thin films by liquid delivery MOCVD at low temperatures
4. 3 films for Gigabit DRAM
5. 3 thin films for Gbit-scale DRAMs
6. MOCVD of complex metal oxide thin films by liquid source CVD
7. Deposition of thin BST films in a multi-wafer planetary reactor