Role of Marangoni convection in Si-Czochralski melts, part I: 3D predictions without crystal

Journal of Crystal Growth

Volumn 253, Issue 1-4, 2003, Pages 142-154

  Kumar, V ^a   Basu, B ^b   Enger, S ^a,c   Brenner, G ^a   Durst, F ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b TATA RESEARCH DEVELOPMENT AND DESIGN CENTRE   (India)

^c SIEMENS AG   (Germany)

Author keywords

A1. Computer simulation; A1. Convection; A2. Czochralski method; B1. Silicon

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; HEAT CONVECTION; SILICON; SURFACE TENSION;

CRYSTAL GROWTH TECHNIQUES;

CRYSTAL GROWTH FROM MELT;

EID: 0038025274     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01043-1     Document Type: Article

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