Dependence of Si melt flow in a crucible on surface tension variation in the Czochralski process

Journal of Crystal Growth

Volumn 236, Issue 4, 2002, Pages 523-528

  Nakanishi, Hideo ^a   Watanabe, Masayuki ^a   Terashima, Kazutaka ^b  

^a Nissei Bldg   (Japan)

^b SHONAN INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A1. Marangoni flow; A1. Numerical analysis; A1. Surface tension; A2. Czochralski method; A2. Industrial crystallization; A2. Silicon melt

Indexed keywords

CRYSTALLIZATION; KINETIC THEORY; NUMERICAL ANALYSIS; SILICON; SURFACE TENSION;

KINETIC TRANSPORTATION;

CRYSTAL GROWTH FROM MELT;

EID: 0036494092     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02383-1     Document Type: Article

References (8)