Turbulent transport of oxygen in the Czochralski growth of large silicon crystals

Journal of Crystal Growth

Volumn 198-199, Issue PART I, 1999, Pages 141-146

  Zhang, T ^a   Wang, G X ^a   Zhang, H ^a   Ladeinde, F ^a   Prasad, V ^a  

^a STONY BROOK UNIVERSITY   (United States)

Author keywords

Convection; Czochralski

Indexed keywords

COMPUTER SIMULATION; CRUCIBLES; CRYSTAL GROWTH FROM MELT; EVAPORATION; FLOW PATTERNS; OXYGEN; SOLUBILITY; TURBULENCE; TURBULENT FLOW;

RENORMALIZATION GROUP (RNG) METHOD;

SEMICONDUCTING SILICON;

EID: 0033514763     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01190-7     Document Type: Article

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