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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2382-2386

Size and interface state dependence of the luminescence properties in Si nanocrystals

(5) Ahn, Chang Geun a Jang, Tae Su a Kim, Kwang Hee b Kwon, Young Kyu c Kang, Bongkoo a

a Pohang University of Science and Technology (POSTECH) (South Korea)

b Kyungpook National University (South Korea)

c Uiduk University (South Korea)

Author keywords

Annealing; Implant; Interface state; Nanocrystal; Photoluminescence; Size

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; INTERFACES (MATERIALS); ION IMPLANTATION; LOW TEMPERATURE EFFECTS; OXIDATION; PARTICLE SIZE ANALYSIS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SILICA;

LOW TEMPERATURE ANNEALING; QUANTUM STATE; SPECTRUM REDSHIFTS;

NANOSTRUCTURED MATERIALS;

EID: 0038009577 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.2382 Document Type: Article

Times cited : (8)

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